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RN1301(TE85L,F) vs BCR562 feature comparison

RN1301(TE85L,F) Toshiba America Electronic Components

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BCR562 Siemens

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Rohs Code Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer TOSHIBA CORP SIEMENS A G
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Toshiba
Additional Feature BUILT IN BAIS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.5 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 60
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.1 W
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz 150 MHz
Base Number Matches 1 2
HTS Code 8541.21.00.75
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 0.33 W
Qualification Status Not Qualified
VCEsat-Max 0.3 V
Transistors » Small Signal Bipolar Transistors
Transistors » Small Signal Bipolar Transistors

Compare RN1301(TE85L,F) with alternatives

Compare BCR562 with alternatives