BCR183E6327HTSA1 vs KSR1210 feature comparison

BCR183E6327HTSA1 Infineon Technologies AG

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KSR1210 Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG SAMSUNG SEMICONDUCTOR INC
Package Description SMALL OUTLINE, R-PDSO-G3 IN-LINE, R-PSIP-T3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 40 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 100
JESD-30 Code R-PDSO-G3 R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Polarity/Channel Type PNP NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz 250 MHz
Base Number Matches 1 2
Part Package Code TO-92S
Pin Count 3

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