RH825AE3
vs
1N825
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
STMICROELECTRONICS
Package Description
O-LALF-W2
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
METALLURGICALLY BONDED
TEMPERATURE COMPENSATED
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
JEDEC-95 Code
DO-204AA
JESD-30 Code
O-LALF-W2
O-LALF-W2
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.5 W
0.4 W
Reference Voltage-Nom
6.2 V
6.2 V
Surface Mount
NO
NO
Technology
ZENER
ZENER
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Voltage Temp Coeff-Max
0.124 mV/°C
0.124 mV/°C
Voltage Tol-Max
4.84%
5%
Base Number Matches
1
4
Rohs Code
Dynamic Impedance-Max
15 Ω
JESD-609 Code
e0
Qualification Status
Not Qualified
Terminal Finish
TIN LEAD
Working Test Current
7.5 mA
Compare RH825AE3 with alternatives
Compare 1N825 with alternatives