RF1K49223 vs HUF76113DK8T feature comparison

RF1K49223 Intersil Corporation

Buy Now Datasheet

HUF76113DK8T Fairchild Semiconductor Corporation

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERSIL CORP FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 2.5 A 6 A
Drain-source On Resistance-Max 0.36 Ω 0.041 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e0 e3
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2 W 2.5 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Pbfree Code Yes
Part Package Code SOIC
Package Description PLASTIC, SO-8
Pin Count 8
Moisture Sensitivity Level 1

Compare RF1K49223 with alternatives

Compare HUF76113DK8T with alternatives