RF1K49223 vs PHN210 feature comparison

RF1K49223 Rochester Electronics LLC

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PHN210 NXP Semiconductors

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Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC NXP SEMICONDUCTORS
Reach Compliance Code unknown compliant
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 2.5 A 3.4 A
Drain-source On Resistance-Max 0.36 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e0 e4
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL N-CHANNEL
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD NICKEL PALLADIUM GOLD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 3
Part Package Code SOIC
Package Description PLASTIC, SO-8
Pin Count 8
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 13 mJ
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 4 W
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 14 A
Turn-off Time-Max (toff) 140 ns
Turn-on Time-Max (ton) 40 ns

Compare RF1K49223 with alternatives

Compare PHN210 with alternatives