Part Details for HUF76113DK8T by Fairchild Semiconductor Corporation
Overview of HUF76113DK8T by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HUF76113DK8T
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-HUF76113DK8T-ND
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DigiKey | MOSFET 2N-CH 30V 6A US8 Min Qty: 592 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
42500 In Stock |
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$0.5100 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 6A, 30V, 0.041ohm, 2-Element, N-Channel, MOSFET, MS-012AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 42500 |
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$0.4144 / $0.4875 | Buy Now |
Part Details for HUF76113DK8T
HUF76113DK8T CAD Models
HUF76113DK8T Part Data Attributes
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HUF76113DK8T
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
HUF76113DK8T
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, PLASTIC, SO-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOIC | |
| Package Description | PLASTIC, SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.041 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for HUF76113DK8T
This table gives cross-reference parts and alternative options found for HUF76113DK8T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF76113DK8T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HUF76113DK8T | Rochester Electronics LLC | Check for Price | 6A, 30V, 0.041ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8 | HUF76113DK8T vs HUF76113DK8T |
| HUF76113DK8T | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | HUF76113DK8T vs HUF76113DK8T |
| HUF76113DK8 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, PLASTIC, SO-8 | HUF76113DK8T vs HUF76113DK8 |