R1Q3A3618ABG-60R
vs
GS8161E36DD-150
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
RENESAS TECHNOLOGY CORP
|
GSI TECHNOLOGY
|
Part Package Code |
BGA
|
BGA
|
Package Description |
15 X 17 MM, 1 MM PITCH, PLASTIC, LBGA-165
|
LBGA,
|
Pin Count |
165
|
165
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
3A991.B.2.A
|
3A991.B.2.B
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
JESD-30 Code |
R-PBGA-B165
|
R-PBGA-B165
|
JESD-609 Code |
e1
|
|
Length |
17 mm
|
15 mm
|
Memory Density |
37748736 bit
|
18874368 bit
|
Memory IC Type |
QDR SRAM
|
CACHE SRAM
|
Memory Width |
18
|
36
|
Number of Functions |
1
|
1
|
Number of Terminals |
165
|
165
|
Number of Words |
2097152 words
|
524288 words
|
Number of Words Code |
2000000
|
512000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
70 °C
|
Operating Temperature-Min |
|
|
Organization |
2MX18
|
512KX36
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
LBGA
|
LBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, LOW PROFILE
|
GRID ARRAY, LOW PROFILE
|
Parallel/Serial |
SERIAL
|
PARALLEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
1.46 mm
|
1.4 mm
|
Supply Voltage-Max (Vsup) |
1.9 V
|
2.7 V
|
Supply Voltage-Min (Vsup) |
1.7 V
|
2.3 V
|
Supply Voltage-Nom (Vsup) |
1.8 V
|
2.5 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
Terminal Finish |
TIN SILVER COPPER
|
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1 mm
|
1 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Width |
15 mm
|
13 mm
|
Base Number Matches |
1
|
8
|
Rohs Code |
|
No
|
Access Time-Max |
|
7.5 ns
|
Additional Feature |
|
FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare R1Q3A3618ABG-60R with alternatives
Compare GS8161E36DD-150 with alternatives