PUMD2,125
vs
PUMD2/A2,115
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
NEXPERIA
|
NXP SEMICONDUCTORS
|
| Part Package Code |
TSSOP
|
|
| Package Description |
SMALL OUTLINE, R-PDSO-G6
|
|
| Pin Count |
6
|
|
| Manufacturer Package Code |
SOT363
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Nexperia
|
|
| Additional Feature |
BUILT IN BIAS RESISTANCE RATIO IS 1
|
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
50 V
|
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
|
| DC Current Gain-Min (hFE) |
60
|
60
|
| JESD-30 Code |
R-PDSO-G6
|
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
6
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
NPN AND PNP
|
NPN AND PNP
|
| Reference Standard |
IEC-60134
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Power Dissipation-Max (Abs) |
|
0.2 W
|
|
|
|
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-
PUMD2,125 vs PUMD2,115
-
PUMD2,125 vs PUMD2/A2,165
-
PUMD2,125 vs PUMD2/ZL
-
PUMD2,125 vs PUMD2/ZLH
-
PUMD2,125 vs PUMD2/T2
-
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-
PUMD2,125 vs PUMD2/A2
Compare PUMD2/A2,115 with alternatives
-
PUMD2/A2,115 vs PUMD20/T1
-
PUMD2/A2,115 vs 934049950115
-
PUMD2/A2,115 vs PUMD2,115
-
PUMD2/A2,115 vs PUMD2/A2,165
-
PUMD2/A2,115 vs PUMD2/ZL
-
PUMD2/A2,115 vs PUMD2/ZLH
-
PUMD2/A2,115 vs PUMD2/T2
-
PUMD2/A2,115 vs 934049950165
-
PUMD2/A2,115 vs PUMD2/A2