PSMN070-200B,118
vs
FQB34N20TM
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
NXP SEMICONDUCTORS
ROCHESTER ELECTRONICS LLC
Part Package Code
D2PAK
TO-263
Package Description
PLASTIC, D2PAK-3
D2PAK-3
Pin Count
3
3
Manufacturer Package Code
SOT404
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.75
Factory Lead Time
4 Weeks
Avalanche Energy Rating (Eas)
462 mJ
640 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
35 A
31 A
Drain-source On Resistance-Max
0.07 Ω
0.075 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
245
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
230 W
Pulsed Drain Current-Max (IDM)
140 A
124 A
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
YES
YES
Terminal Finish
TIN
NOT SPECIFIED
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
JEDEC-95 Code
TO-263AB
Compare PSMN070-200B,118 with alternatives
Compare FQB34N20TM with alternatives