PSMN070-200B,118
vs
FQB34N20L
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
ON SEMICONDUCTOR
Part Package Code
D2PAK
Package Description
PLASTIC, D2PAK-3
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Manufacturer Package Code
SOT404
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.75
Factory Lead Time
4 Weeks
Avalanche Energy Rating (Eas)
462 mJ
640 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
35 A
31 A
Drain-source On Resistance-Max
0.07 Ω
0.08 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
245
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
230 W
Pulsed Drain Current-Max (IDM)
140 A
124 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Additional Feature
FAST SWITCHING, AVALANCHE RATED
JEDEC-95 Code
TO-263AB
Compare PSMN070-200B,118 with alternatives
Compare FQB34N20L with alternatives