PSMN070-200B,118 vs FQB34N20L feature comparison

PSMN070-200B,118 NXP Semiconductors

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FQB34N20L onsemi

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS ON SEMICONDUCTOR
Part Package Code D2PAK
Package Description PLASTIC, D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Manufacturer Package Code SOT404
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.75
Factory Lead Time 4 Weeks
Avalanche Energy Rating (Eas) 462 mJ 640 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 35 A 31 A
Drain-source On Resistance-Max 0.07 Ω 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 230 W
Pulsed Drain Current-Max (IDM) 140 A 124 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Additional Feature FAST SWITCHING, AVALANCHE RATED
JEDEC-95 Code TO-263AB

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