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PHT11N06LT vs PHT11N06LT,135 feature comparison

PHT11N06LT Nexperia

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PHT11N06LT,135 NXP Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NEXPERIA NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Date Of Intro 2017-02-01
Avalanche Energy Rating (Eas) 60 mJ 60 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 4.9 A 4.9 A
Drain-source On Resistance-Max 0.04 Ω 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 19 A 19 A
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 1
Part Package Code SC-73
Pin Count 4
Manufacturer Package Code SOT223
HTS Code 8541.29.00.95
Feedback Cap-Max (Crss) 150 pF
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 8.3 W
Power Dissipation-Max (Abs) 1.8 W
Qualification Status Not Qualified
Turn-off Time-Max (toff) 210 ns
Turn-on Time-Max (ton) 125 ns
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

Compare PHT11N06LT with alternatives

Compare PHT11N06LT,135 with alternatives