PHT11N06LT,135
vs
PHT11N06TT/R
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
PHILIPS SEMICONDUCTORS
|
Part Package Code |
SC-73
|
|
Pin Count |
4
|
|
Manufacturer Package Code |
SOT223
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Avalanche Energy Rating (Eas) |
60 mJ
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
55 V
|
|
Drain Current-Max (ID) |
4.9 A
|
4.9 A
|
Drain-source On Resistance-Max |
0.04 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
150 pF
|
|
JESD-30 Code |
R-PDSO-G4
|
|
JESD-609 Code |
e3
|
e0
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
8.3 W
|
|
Power Dissipation-Max (Abs) |
1.8 W
|
1.8 W
|
Pulsed Drain Current-Max (IDM) |
19 A
|
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
GULL WING
|
|
Terminal Position |
DUAL
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Turn-off Time-Max (toff) |
210 ns
|
|
Turn-on Time-Max (ton) |
125 ns
|
|
Base Number Matches |
2
|
2
|
Package Description |
|
,
|
|
|
|
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