PHT11N06LT
vs
IRFL4105PBF
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
NEXPERIA
|
INTERNATIONAL RECTIFIER CORP
|
Package Description |
SMALL OUTLINE, R-PDSO-G4
|
SOT-223, 3 PIN
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Date Of Intro |
2017-02-01
|
|
Avalanche Energy Rating (Eas) |
60 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
55 V
|
Drain Current-Max (ID) |
4.9 A
|
3.7 A
|
Drain-source On Resistance-Max |
0.04 Ω
|
0.045 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G4
|
R-PSSO-G3
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
19 A
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
Matte Tin (Sn)
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
2
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
TO-261AA
|
Pin Count |
|
3
|
HTS Code |
|
8541.29.00.95
|
JEDEC-95 Code |
|
TO-261AA
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Peak Reflow Temperature (Cel) |
|
260
|
Power Dissipation Ambient-Max |
|
2.1 W
|
Power Dissipation-Max (Abs) |
|
1 W
|
Qualification Status |
|
Not Qualified
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare PHT11N06LT with alternatives
Compare IRFL4105PBF with alternatives