Findchips: Compare PH20100S,115 vs PHM25NQ10T,518

PH20100S,115 vs PHM25NQ10T,518 feature comparison

Buy Now Datasheet

Buy Now Datasheet

Rohs Code	Yes
Part Life Cycle Code	Transferred	Obsolete
Ihs Manufacturer	NXP SEMICONDUCTORS	NXP SEMICONDUCTORS
Part Package Code	SOIC
Package Description	PLASTIC, LFPAK-4	SMALL OUTLINE, R-PDSO-N8
Pin Count	4	8
Manufacturer Package Code	SOT669
Reach Compliance Code	not_compliant	unknown
ECCN Code	EAR99	EAR99
HTS Code	8541.29.00.75
Avalanche Energy Rating (Eas)	250 mJ	170 mJ
Case Connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	100 V
Drain Current-Max (ID)	34.3 A	30.7 A
Drain-source On Resistance-Max	0.023 Ω	0.03 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	MO-235
JESD-30 Code	R-PSSO-G4	R-PDSO-N8
JESD-609 Code	e3
Moisture Sensitivity Level	1
Number of Elements	1	1
Number of Terminals	4	8
Operating Mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	150 °C
Package Body Material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	N-CHANNEL
Power Dissipation-Max (Abs)	62.5 W
Pulsed Drain Current-Max (IDM)	134 A	60 A
Qualification Status	Not Qualified	Not Qualified
Surface Mount	YES	YES
Terminal Finish	TIN
Terminal Form	GULL WING	NO LEAD
Terminal Position	SINGLE	DUAL
Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	SWITCHING
Transistor Element Material	SILICON	SILICON
Base Number Matches	2	1
	Transistors » Power Field-Effect Transistors	Transistors » Power Field-Effect Transistors