PEMB10,115 vs NSBA123JDXV6T1G feature comparison

PEMB10,115 Nexperia

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NSBA123JDXV6T1G onsemi

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Part Life Cycle Code Active Active
Ihs Manufacturer NEXPERIA ONSEMI
Part Package Code SOT SOT-563, 6 LEAD
Package Description SMALL OUTLINE, R-PDSO-F6 LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN
Pin Count 6 6
Manufacturer Package Code SOT666 463A-01
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Nexperia onsemi
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 21 BUILT IN BIAS RESISTOR RATIO IS 0.047
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100 80
JESD-30 Code R-PDSO-F6 R-PDSO-F6
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 2 2
Number of Terminals 6 6
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type PNP PNP
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN Matte Tin (Sn) - annealed
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Factory Lead Time 4 Weeks
Power Dissipation-Max (Abs) 0.5 W

Compare PEMB10,115 with alternatives

Compare NSBA123JDXV6T1G with alternatives