P4KE8.2A_B0_10001 vs P4KE8.2A feature comparison

P4KE8.2A_B0_10001 PanJit Semiconductor

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P4KE8.2A HY Electronic Corp

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer PAN JIT INTERNATIONAL INC HY ELECTRONIC CORP
Package Description O-PALF-W2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 8.61 V 8.61 V
Breakdown Voltage-Min 7.79 V 7.79 V
Breakdown Voltage-Nom 8.2 V 8.2 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 12.1 V 12.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 7.02 V 7.02 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 57
Power Dissipation-Max 1 W

Compare P4KE8.2A_B0_10001 with alternatives

Compare P4KE8.2A with alternatives