P4KE8.2A_B0_10001 vs P4KE8.2AR0G feature comparison

P4KE8.2A_B0_10001 PanJit Semiconductor

Buy Now Datasheet

P4KE8.2AR0G Taiwan Semiconductor

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC TAIWAN SEMICONDUCTOR CO LTD
Package Description O-PALF-W2 DO-41, 2 PIN
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 8.61 V 8.61 V
Breakdown Voltage-Min 7.79 V 7.79 V
Breakdown Voltage-Nom 8.2 V 8.2 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 12.1 V 12.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 7.02 V 7.02 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
JESD-609 Code e3
Power Dissipation-Max 1 W
Reference Standard UL RECOGNIZED
Terminal Finish MATTE TIN

Compare P4KE8.2A_B0_10001 with alternatives

Compare P4KE8.2AR0G with alternatives