P4KE8.2A vs P4KE8.2AR0G feature comparison

P4KE8.2A International Semiconductor Inc

Buy Now Datasheet

P4KE8.2AR0G Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW IMPEDANCE EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 8.61 V 8.61 V
Breakdown Voltage-Min 7.79 V 7.79 V
Breakdown Voltage-Nom 8.2 V 8.2 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 12.1 V 12.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 7 V 7.02 V
Reverse Current-Max 200 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 57 1
Rohs Code Yes
Package Description DO-41, 2 PIN
JEDEC-95 Code DO-204AL
JESD-609 Code e3
Reference Standard UL RECOGNIZED
Terminal Finish MATTE TIN

Compare P4KE8.2A with alternatives

Compare P4KE8.2AR0G with alternatives