NT5AD512M16C4-HR vs K4A8G165WB-BCRC feature comparison

NT5AD512M16C4-HR Nanya Technology Corporation

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K4A8G165WB-BCRC Samsung Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer NANYA TECHNOLOGY CORP SAMSUNG SEMICONDUCTOR INC
Package Description , FBGA-96
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Access Mode FOUR BANK PAGE BURST MULTI BANK PAGE BURST
Clock Frequency-Max (fCLK) 1333 MHz 1200 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 8 8
JESD-30 Code R-PBGA-B96 R-PBGA-B96
Length 13 mm 13.3 mm
Memory Density 8589934592 bit 8589934592 bit
Memory IC Type DDR4 DRAM DDR4 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 96 96
Number of Words 536870912 words 536870912 words
Number of Words Code 512000000 512000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 95 °C 85 °C
Operating Temperature-Min
Organization 512MX16 512MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Equivalence Code BGA96,9X16,32 BGA96,9X16,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 8 8
Standby Current-Max 0.022 A 0.011 A
Supply Current-Max 0.274 mA 0.204 mA
Supply Voltage-Max (Vsup) 1.26 V 1.26 V
Supply Voltage-Min (Vsup) 1.14 V 1.14 V
Supply Voltage-Nom (Vsup) 1.2 V 1.2 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 7.5 mm 7.5 mm
Base Number Matches 1 1
HTS Code 8542.32.00.36
Samacsys Manufacturer SAMSUNG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Refresh Cycles 8192
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare NT5AD512M16C4-HR with alternatives

Compare K4A8G165WB-BCRC with alternatives