Part Details for K4A8G165WB-BCRC by Samsung Semiconductor
Overview of K4A8G165WB-BCRC by Samsung Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for K4A8G165WB-BCRC
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 25 |
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RFQ | ||
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Quest Components | DDR DRAM, 512MX16, CMOS, PBGA96 | 20 |
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$12.1380 / $13.6553 | Buy Now |
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Chip 1 Exchange | INSTOCK | 41141 |
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RFQ |
Part Details for K4A8G165WB-BCRC
K4A8G165WB-BCRC CAD Models
K4A8G165WB-BCRC Part Data Attributes:
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K4A8G165WB-BCRC
Samsung Semiconductor
Buy Now
Datasheet
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Compare Parts:
K4A8G165WB-BCRC
Samsung Semiconductor
DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | FBGA-96 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Samacsys Manufacturer | SAMSUNG | |
| Access Mode | MULTI BANK PAGE BURST | |
| Clock Frequency-Max (fCLK) | 1200 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 8 | |
| JESD-30 Code | R-PBGA-B96 | |
| Length | 13.3 mm | |
| Memory Density | 8589934592 bit | |
| Memory IC Type | DDR4 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 96 | |
| Number of Words | 536870912 words | |
| Number of Words Code | 512000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 512MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA96,9X16,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 8 | |
| Standby Current-Max | 0.011 A | |
| Supply Current-Max | 0.204 mA | |
| Supply Voltage-Max (Vsup) | 1.26 V | |
| Supply Voltage-Min (Vsup) | 1.14 V | |
| Supply Voltage-Nom (Vsup) | 1.2 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 7.5 mm |
Alternate Parts for K4A8G165WB-BCRC
This table gives cross-reference parts and alternative options found for K4A8G165WB-BCRC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4A8G165WB-BCRC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4A8G165WB-BIRC0 | DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 | Samsung Semiconductor | K4A8G165WB-BCRC vs K4A8G165WB-BIRC0 |