NE960R275
vs
FLU35XM
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
FUJITSU SEMICONDUCTOR AMERICA INC
|
| Package Description |
,
|
MICROWAVE, R-CQMW-F4
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
15 V
|
15 V
|
| Drain Current-Max (ID) |
0.3 A
|
|
| FET Technology |
METAL SEMICONDUCTOR
|
JUNCTION
|
| Highest Frequency Band |
KU BAND
|
L BAND
|
| Number of Elements |
1
|
1
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
175 °C
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
1.5 W
|
|
| Base Number Matches |
1
|
1
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
CASE XM
|
| Additional Feature |
|
HIGH RELIABILITY
|
| JESD-30 Code |
|
R-CQMW-F4
|
| Number of Terminals |
|
4
|
| Package Body Material |
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
MICROWAVE
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
YES
|
| Terminal Form |
|
FLAT
|
| Terminal Position |
|
QUAD
|
| Transistor Element Material |
|
GALLIUM ARSENIDE
|
|
|
|
Compare NE960R275 with alternatives
Compare FLU35XM with alternatives