NE960R275
vs
FLU35ZM
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NEC ELECTRONICS CORP
|
SUMITOMO ELECTRIC INDUSTRIES LTD
|
| Package Description |
FLANGE MOUNT, R-CDFM-F2
|
FLATPACK, R-PQFP-F4
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
| Case Connection |
SOURCE
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
15 V
|
10 V
|
| Drain Current-Max (ID) |
0.3 A
|
|
| FET Technology |
METAL SEMICONDUCTOR
|
JUNCTION
|
| Highest Frequency Band |
KU BAND
|
L BAND
|
| JESD-30 Code |
R-CDFM-F2
|
R-PQFP-F4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
4
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLATPACK
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
1.5 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
QUAD
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
| Base Number Matches |
3
|
2
|
| Pbfree Code |
|
No
|
| Pin Count |
|
4
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare NE960R275 with alternatives
Compare FLU35ZM with alternatives