NE960R275
vs
NE960R275-A
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
NEC ELECTRONICS CORP
|
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
|
Package Description |
FLANGE MOUNT, R-CDFM-F2
|
HERMETIC SEALED, CERAMIC, 75, 2 PIN
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
HIGH RELIABILITY
|
|
Case Connection |
SOURCE
|
SOURCE
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
15 V
|
9 V
|
Drain Current-Max (ID) |
0.3 A
|
0.35 A
|
FET Technology |
METAL SEMICONDUCTOR
|
METAL SEMICONDUCTOR
|
Highest Frequency Band |
KU BAND
|
KU BAND
|
JESD-30 Code |
R-CDFM-F2
|
R-CDFM-F2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
1.5 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
FLAT
|
FLAT
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
Base Number Matches |
3
|
2
|
Moisture Sensitivity Level |
|
1
|
|
|
|
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