NE32584C-T1A
vs
NE34018-T1
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
RENESAS ELECTRONICS CORP
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW NOISE
|
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
3 V
|
3 V
|
Drain Current-Max (ID) |
0.02 A
|
0.03 A
|
FET Technology |
HETERO-JUNCTION
|
HETERO-JUNCTION
|
Highest Frequency Band |
KU BAND
|
S BAND
|
JESD-30 Code |
X-CXMW-F4
|
R-PDSO-G4
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
PLASTIC/EPOXY
|
Package Shape |
UNSPECIFIED
|
RECTANGULAR
|
Package Style |
MICROWAVE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Gain-Min (Gp) |
11 dB
|
14 dB
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
FLAT
|
GULL WING
|
Terminal Position |
UNSPECIFIED
|
DUAL
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
GALLIUM ARSENIDE
|
SILICON
|
Base Number Matches |
4
|
3
|
Package Description |
|
PLASTIC, SUPERMINI-4
|
Case Connection |
|
SOURCE
|
|
|
|
Compare NE32584C-T1A with alternatives
Compare NE34018-T1 with alternatives