NE34018-T1
vs
NE3210S01-T1B
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
|
RENESAS ELECTRONICS CORP
|
| Package Description |
PLASTIC, SUPERMINI-4
|
MICROWAVE, X-PXMW-G4
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW NOISE
|
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
3 V
|
3 V
|
| Drain Current-Max (ID) |
0.03 A
|
0.015 A
|
| FET Technology |
HETERO-JUNCTION
|
HETERO-JUNCTION
|
| Highest Frequency Band |
S BAND
|
KU BAND
|
| JESD-30 Code |
R-PDSO-G4
|
X-PXMW-G4
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
UNSPECIFIED
|
| Package Style |
SMALL OUTLINE
|
MICROWAVE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Gain-Min (Gp) |
14 dB
|
12 dB
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
UNSPECIFIED
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
GALLIUM ARSENIDE
|
SILICON
|
| Base Number Matches |
3
|
4
|
| Pbfree Code |
|
Yes
|
| HTS Code |
|
8541.21.00.95
|
| Operating Temperature-Max |
|
125 °C
|
| Peak Reflow Temperature (Cel) |
|
230
|
| Power Dissipation Ambient-Max |
|
0.165 W
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
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