N82S123B vs N82S23N feature comparison

N82S123B Philips Semiconductors

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N82S23N YAGEO Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SIGNETICS CORP PHILIPS COMPONENTS
Package Description , DIP-16
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.71 8542.32.00.71
Access Time-Max 50 ns 50 ns
JESD-30 Code R-PDIP-T16 R-PDIP-T16
Memory Density 256 bit 256 bit
Memory IC Type OTP ROM OTP ROM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 16 16
Number of Words 32 words 32 words
Number of Words Code 32 32
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 75 °C 75 °C
Operating Temperature-Min
Organization 32X8 32X8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 5.25 V 5.25 V
Supply Voltage-Min (Vsup) 4.75 V 4.75 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology BIPOLAR BIPOLAR
Temperature Grade COMMERCIAL EXTENDED COMMERCIAL EXTENDED
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Base Number Matches 1 1

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