N82S123B
vs
N82S23F
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
SIGNETICS CORP
PHILIPS SEMICONDUCTORS
Package Description
,
DIP, DIP16,.3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.71
8542.32.00.71
Access Time-Max
50 ns
50 ns
JESD-30 Code
R-PDIP-T16
R-XDIP-T16
Memory Density
256 bit
Memory IC Type
OTP ROM
OTP ROM
Memory Width
8
8
Number of Functions
1
Number of Terminals
16
16
Number of Words
32 words
32 words
Number of Words Code
32
32
Operating Mode
ASYNCHRONOUS
Operating Temperature-Max
75 °C
70 °C
Operating Temperature-Min
Organization
32X8
32X8
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
CERAMIC
Package Code
DIP
DIP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Supply Voltage-Max (Vsup)
5.25 V
Supply Voltage-Min (Vsup)
4.75 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
BIPOLAR
TTL
Temperature Grade
COMMERCIAL EXTENDED
COMMERCIAL
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
DUAL
DUAL
Base Number Matches
3
3
Rohs Code
JESD-609 Code
e0
Package Equivalence Code
DIP16,.3
Supply Current-Max
0.096 mA
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Pitch
2.54 mm
Compare N82S123B with alternatives
Compare N82S23F with alternatives