MURS360 vs BYG60J/T1 feature comparison

MURS360 Diodes Incorporated

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BYG60J/T1 NXP Semiconductors

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer DIODES INC NXP SEMICONDUCTORS
Reach Compliance Code not_compliant unknown
Factory Lead Time 8 Weeks
Samacsys Manufacturer Diodes Incorporated
Additional Feature LOW LEAKAGE CURRENT
Application EFFICIENCY FAST SOFT RECOVERY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Pk Forward Current-Max 100 A 25 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 600 V 600 V
Reverse Current-Max 3 µA
Reverse Recovery Time-Max 0.05 µs 0.25 µs
Surface Mount YES YES
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 4 1
Part Package Code DO-214AC
Package Description PLASTIC, SOD-106, 2 PIN
Pin Count 2
ECCN Code EAR99
JEDEC-95 Code DO-214AC
Qualification Status Not Qualified
Technology AVALANCHE

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