BYG60J/T1 vs MURS360BT3G feature comparison

BYG60J/T1 NXP Semiconductors

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MURS360BT3G Rochester Electronics LLC

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer NXP SEMICONDUCTORS ROCHESTER ELECTRONICS INC
Part Package Code DO-214AC DO-214
Package Description PLASTIC, SOD-106, 2 PIN R-PDSO-C2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99
Application FAST SOFT RECOVERY HIGH VOLTAGE ULTRA FAST RECOVERY POWER
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-214AC DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Pk Forward Current-Max 25 A 100 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified COMMERCIAL
Rep Pk Reverse Voltage-Max 600 V 600 V
Reverse Recovery Time-Max 0.25 µs 0.075 µs
Surface Mount YES YES
Technology AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 2
Pbfree Code No
Manufacturer Package Code CASE 403A-03
Additional Feature FREE WHEELING DIODE
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Output Current-Max 3 A
Peak Reflow Temperature (Cel) 240
Terminal Finish TIN LEAD
Time@Peak Reflow Temperature-Max (s) 30

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