MUN5116DW1T1 vs MUN5113T1 feature comparison

MUN5116DW1T1 Rochester Electronics LLC

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MUN5113T1 onsemi

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Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ON SEMICONDUCTOR
Part Package Code SC-88 SC-70
Package Description CASE 419B-02, SC-70, SC-88, 6 PIN CASE 419-04, SC-70, 3 PIN
Pin Count 6 3
Manufacturer Package Code CASE 419B-02 CASE 419-04
Reach Compliance Code unknown not_compliant
Additional Feature BUILT-IN BIAS RESISTOR BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 160 80
JESD-30 Code R-PDSO-G6 R-PDSO-G3
JESD-609 Code e0 e0
Moisture Sensitivity Level NOT SPECIFIED 1
Number of Elements 2 1
Number of Terminals 6 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240 235
Polarity/Channel Type PNP PNP
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 6 5
ECCN Code EAR99
Power Dissipation-Max (Abs) 0.15 W

Compare MUN5116DW1T1 with alternatives

Compare MUN5113T1 with alternatives