MUN5116DW1T1 vs MUN5132DW1T1 feature comparison

MUN5116DW1T1 Rochester Electronics LLC

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MUN5132DW1T1 Motorola Semiconductor Products

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC MOTOROLA INC
Part Package Code SC-88
Package Description CASE 419B-02, SC-70, SC-88, 6 PIN SMALL OUTLINE, R-PDSO-G6
Pin Count 6
Manufacturer Package Code CASE 419B-02
Reach Compliance Code unknown unknown
Additional Feature BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 160 15
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e0 e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 2 2
Number of Terminals 6 6
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type PNP PNP
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 6 5
ECCN Code EAR99
HTS Code 8541.21.00.95
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 0.15 W
VCEsat-Max 0.25 V

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