MTD5P06VT4 vs MTD6N20E1 feature comparison

MTD5P06VT4 Rochester Electronics LLC

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MTD6N20E1 Rochester Electronics LLC

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Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ROCHESTER ELECTRONICS LLC
Package Description CASE 369C-01, DPAK-3 DPAK-3
Pin Count 3 3
Manufacturer Package Code CASE 369C-01
Reach Compliance Code unknown unknown
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 125 mJ 54 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 200 V
Drain Current-Max (ID) 5 A 6 A
Drain-source On Resistance-Max 0.45 Ω 0.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) 240 NOT SPECIFIED
Polarity/Channel Type P-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 18 A 18 A
Qualification Status COMMERCIAL COMMERCIAL
Surface Mount YES NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Moisture Sensitivity Level NOT SPECIFIED

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