MTD5P06VT4
vs
MTD6N20E1
feature comparison
Pbfree Code |
No
|
No
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
ROCHESTER ELECTRONICS LLC
|
Package Description |
CASE 369C-01, DPAK-3
|
DPAK-3
|
Pin Count |
3
|
3
|
Manufacturer Package Code |
CASE 369C-01
|
|
Reach Compliance Code |
unknown
|
unknown
|
Additional Feature |
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas) |
125 mJ
|
54 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
200 V
|
Drain Current-Max (ID) |
5 A
|
6 A
|
Drain-source On Resistance-Max |
0.45 Ω
|
0.7 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G2
|
R-PSIP-T3
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
IN-LINE
|
Peak Reflow Temperature (Cel) |
240
|
NOT SPECIFIED
|
Polarity/Channel Type |
P-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
18 A
|
18 A
|
Qualification Status |
COMMERCIAL
|
COMMERCIAL
|
Surface Mount |
YES
|
NO
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Moisture Sensitivity Level |
|
NOT SPECIFIED
|
|
|
|
Compare MTD5P06VT4 with alternatives
Compare MTD6N20E1 with alternatives