MTD5P06VT4
vs
MTD6P10E
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
MOTOROLA INC
|
Package Description |
,
|
SMALL OUTLINE, R-PSSO-G2
|
Reach Compliance Code |
unknown
|
unknown
|
Configuration |
Single
|
SINGLE
|
Drain Current-Max (Abs) (ID) |
5 A
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
150 °C
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
40 W
|
50 W
|
Surface Mount |
YES
|
YES
|
Base Number Matches |
5
|
4
|
ECCN Code |
|
EAR99
|
Case Connection |
|
DRAIN
|
DS Breakdown Voltage-Min |
|
100 V
|
Drain Current-Max (ID) |
|
6 A
|
Drain-source On Resistance-Max |
|
0.66 Ω
|
JESD-30 Code |
|
R-PSSO-G2
|
JESD-609 Code |
|
e0
|
Number of Elements |
|
1
|
Number of Terminals |
|
2
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
SMALL OUTLINE
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
|
GULL WING
|
Terminal Position |
|
SINGLE
|
Transistor Element Material |
|
SILICON
|
|
|
|