MTD6N20E1 vs MTD6P10ET4 feature comparison

MTD6N20E1 onsemi

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MTD6P10ET4 Motorola Semiconductor Products

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Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer ONSEMI MOTOROLA INC
Package Description DPAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 54 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 200 V 100 V
Drain Current-Max (ID) 6 A 6 A
Drain-source On Resistance-Max 0.7 Ω 0.66 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSSO-G2
JESD-609 Code e0 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 50 W 50 W
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 4

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