MTD3055V-1 vs MTD3055V1 feature comparison

MTD3055V-1 Motorola Mobility LLC

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MTD3055V1 onsemi

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MOTOROLA INC ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 3
Manufacturer Package Code CASE 369A-13
Reach Compliance Code unknown unknown
Avalanche Energy Rating (Eas) 72 mJ 72 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 12 A 12 A
Drain-source On Resistance-Max 0.15 Ω 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 37 A 37 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 4
Rohs Code No
JESD-609 Code e0
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish TIN LEAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare MTD3055V-1 with alternatives

Compare MTD3055V1 with alternatives