MTD3055V-1
vs
HUF75329D3S
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MOTOROLA INC
FAIRCHILD SEMICONDUCTOR CORP
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
3
Manufacturer Package Code
CASE 369A-13
TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code
unknown
not_compliant
Avalanche Energy Rating (Eas)
72 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
55 V
Drain Current-Max (ID)
12 A
20 A
Drain-source On Resistance-Max
0.15 Ω
0.026 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
37 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
4
Pbfree Code
Rohs Code
Part Package Code
DPAK
ECCN Code
EAR99
HTS Code
8541.29.00.95
JEDEC-95 Code
TO-252AA
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Max
175 °C
Power Dissipation-Max (Abs)
128 W
Terminal Finish
Matte Tin (Sn)
Compare MTD3055V-1 with alternatives
Compare HUF75329D3S with alternatives