MTD20N06HDL-1
vs
MTD3055EL1
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MOTOROLA INC
NATIONAL SEMICONDUCTOR CORP
Package Description
IN-LINE, R-PSIP-T3
IN-LINE, R-PSIP-T3
Pin Count
3
Manufacturer Package Code
CASE 369-07
Reach Compliance Code
unknown
unknown
Additional Feature
LOGIC LEVEL COMPATIBLE
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
200 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
20 A
12 A
Drain-source On Resistance-Max
0.07 Ω
0.18 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
R-PSIP-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
60 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
5
Pbfree Code
Rohs Code
ECCN Code
EAR99
HTS Code
8541.29.00.95
JEDEC-95 Code
TO-251
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
40 W
Power Dissipation-Max (Abs)
40 W
Terminal Finish
TIN LEAD
Compare MTD20N06HDL-1 with alternatives
Compare MTD3055EL1 with alternatives