MT8LSDT3264AG-133B1
vs
MT16LSDT3264AG-10CXX
feature comparison
Pbfree Code |
No
|
No
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
MICRON TECHNOLOGY INC
|
Part Package Code |
DIMM
|
|
Package Description |
DIMM,
|
,
|
Pin Count |
168
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.36
|
8542.32.00.36
|
Access Mode |
SINGLE BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
Access Time-Max |
5.4 ns
|
6 ns
|
Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
JESD-30 Code |
R-XDMA-N168
|
R-XDMA-N168
|
JESD-609 Code |
e0
|
|
Memory Density |
2147483648 bit
|
2147483648 bit
|
Memory IC Type |
SYNCHRONOUS DRAM MODULE
|
SYNCHRONOUS DRAM MODULE
|
Memory Width |
64
|
64
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
168
|
168
|
Number of Words |
33554432 words
|
33554432 words
|
Number of Words Code |
32000000
|
32000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
65 °C
|
70 °C
|
Operating Temperature-Min |
|
|
Organization |
32MX64
|
32MX64
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Code |
DIMM
|
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Self Refresh |
YES
|
YES
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
Surface Mount |
NO
|
NO
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
1
|
1
|
Peak Reflow Temperature (Cel) |
|
235
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare MT8LSDT3264AG-133B1 with alternatives
Compare MT16LSDT3264AG-10CXX with alternatives