MT47H64M16HW-3AAT:H
vs
K4T1G164QQ-HIE6T
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICRON TECHNOLOGY INC
SAMSUNG SEMICONDUCTOR INC
Package Description
FBGA-84
FBGA, BGA84,9X15,32
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.32
8542.32.00.32
Access Mode
MULTI BANK PAGE BURST
Access Time-Max
0.45 ns
0.45 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B84
R-PBGA-B84
Length
12.5 mm
Memory Density
1073741824 bit
1073741824 bit
Memory IC Type
DDR DRAM
DDR2 DRAM
Memory Width
16
16
Number of Functions
1
Number of Ports
1
Number of Terminals
84
84
Number of Words
67108864 words
67108864 words
Number of Words Code
64000000
64000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
105 °C
Operating Temperature-Min
-40 °C
Organization
64MX16
64MX16
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
FBGA
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, FINE PITCH
Screening Level
AEC-Q100
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Width
8 mm
Base Number Matches
1
1
Pbfree Code
Rohs Code
Clock Frequency-Max (fCLK)
333 MHz
I/O Type
COMMON
Interleaved Burst Length
4,8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Output Characteristics
3-STATE
Package Equivalence Code
BGA84,9X15,32
Qualification Status
Not Qualified
Refresh Cycles
8192
Sequential Burst Length
4,8
Standby Current-Max
0.015 A
Supply Current-Max
0.245 mA
Terminal Finish
MATTE TIN
Compare MT47H64M16HW-3AAT:H with alternatives
Compare K4T1G164QQ-HIE6T with alternatives