K4T1G164QQ-HIE6T
vs
MT47H64M16HW-3AIT:H
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
MICRON TECHNOLOGY INC
Package Description
FBGA, BGA84,9X15,32
TFBGA,
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.32
8542.32.00.32
Access Time-Max
0.45 ns
0.45 ns
Clock Frequency-Max (fCLK)
333 MHz
I/O Type
COMMON
Interleaved Burst Length
4,8
JESD-30 Code
R-PBGA-B84
R-PBGA-B84
JESD-609 Code
e3
e0
Memory Density
1073741824 bit
1073741824 bit
Memory IC Type
DDR2 DRAM
DDR2 DRAM
Memory Width
16
16
Moisture Sensitivity Level
1
Number of Terminals
84
84
Number of Words
67108864 words
67108864 words
Number of Words Code
64000000
64000000
Organization
64MX16
64MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
FBGA
TFBGA
Package Equivalence Code
BGA84,9X15,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH
GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status
Not Qualified
Refresh Cycles
8192
Sequential Burst Length
4,8
Standby Current-Max
0.015 A
Supply Current-Max
0.245 mA
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Terminal Finish
MATTE TIN
TIN LEAD SILVER
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Base Number Matches
1
1
Access Mode
MULTI BANK PAGE BURST
Additional Feature
AUTO/SELF REFRESH
Length
12.5 mm
Number of Functions
1
Number of Ports
1
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Screening Level
AEC-Q100
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Temperature Grade
INDUSTRIAL
Width
8 mm
Compare K4T1G164QQ-HIE6T with alternatives
Compare MT47H64M16HW-3AIT:H with alternatives