K4T1G164QQ-HIE6T
vs
K4T1G164QD-ZCE6
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Package Description
FBGA, BGA84,9X15,32
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.32
8542.32.00.32
Access Time-Max
0.45 ns
0.45 ns
Clock Frequency-Max (fCLK)
333 MHz
333 MHz
I/O Type
COMMON
COMMON
Interleaved Burst Length
4,8
4,8
JESD-30 Code
R-PBGA-B84
R-PBGA-B84
JESD-609 Code
e3
Memory Density
1073741824 bit
1073741824 bit
Memory IC Type
DDR2 DRAM
DDR2 DRAM
Memory Width
16
16
Moisture Sensitivity Level
1
3
Number of Terminals
84
84
Number of Words
67108864 words
67108864 words
Number of Words Code
64000000
64000000
Organization
64MX16
64MX16
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
FBGA
FBGA
Package Equivalence Code
BGA84,9X15,32
BGA84,9X15,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH
GRID ARRAY, FINE PITCH
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
8192
Sequential Burst Length
4,8
4,8
Standby Current-Max
0.015 A
0.015 A
Supply Current-Max
0.245 mA
0.255 mA
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Terminal Finish
MATTE TIN
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Base Number Matches
1
1
Peak Reflow Temperature (Cel)
260
Compare K4T1G164QQ-HIE6T with alternatives
Compare K4T1G164QD-ZCE6 with alternatives