MT16VDDF12864HY-40BJ1
vs
M470L2923DV0-LCC
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICRON TECHNOLOGY INC
SAMSUNG SEMICONDUCTOR INC
Package Description
DIMM, DIMM200,24
DIMM, DIMM200,24
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.36
8542.32.00.36
Access Time-Max
0.7 ns
0.65 ns
Clock Frequency-Max (fCLK)
200 MHz
200 MHz
I/O Type
COMMON
COMMON
JESD-30 Code
R-PDMA-N200
R-XDMA-N200
JESD-609 Code
e3
Memory Density
8589934592 bit
8589934592 bit
Memory IC Type
DDR DRAM MODULE
DDR DRAM MODULE
Memory Width
64
64
Moisture Sensitivity Level
1
Number of Terminals
200
200
Number of Words
134217728 words
134217728 words
Number of Words Code
128000000
128000000
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
Organization
128MX64
128MX64
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Code
DIMM
DIMM
Package Equivalence Code
DIMM200,24
DIMM200,24
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
MICROELECTRONIC ASSEMBLY
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
8192
Standby Current-Max
0.08 A
0.08 A
Supply Current-Max
5.52 mA
3.56 mA
Supply Voltage-Nom (Vsup)
2.6 V
2.6 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Finish
MATTE TIN
Terminal Form
NO LEAD
NO LEAD
Terminal Pitch
0.6 mm
0.6 mm
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Part Package Code
MODULE
Pin Count
200
Access Mode
DUAL BANK PAGE BURST
Additional Feature
AUTO/SELF REFRESH
Number of Functions
1
Number of Ports
1
Operating Mode
SYNCHRONOUS
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Self Refresh
YES
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.5 V
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare MT16VDDF12864HY-40BJ1 with alternatives
Compare M470L2923DV0-LCC with alternatives