Datasheets
MT16VDDF12864HY-40BJ1 by: Micron Technology Inc

DDR DRAM Module, 128MX64, 0.7ns, CMOS, PDMA200

Part Details for MT16VDDF12864HY-40BJ1 by Micron Technology Inc

Overview of MT16VDDF12864HY-40BJ1 by Micron Technology Inc

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Applications Consumer Electronics Computing and Data Storage

Part Details for MT16VDDF12864HY-40BJ1

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MT16VDDF12864HY-40BJ1 Part Data Attributes

MT16VDDF12864HY-40BJ1 Micron Technology Inc
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MT16VDDF12864HY-40BJ1 Micron Technology Inc DDR DRAM Module, 128MX64, 0.7ns, CMOS, PDMA200
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Package Description DIMM, DIMM200,24
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Time-Max 0.7 ns
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
JESD-30 Code R-PDMA-N200
JESD-609 Code e3
Memory Density 8589934592 bit
Memory IC Type DDR DRAM MODULE
Memory Width 64
Moisture Sensitivity Level 1
Number of Terminals 200
Number of Words 134217728 words
Number of Words Code 128000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 128MX64
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code DIMM
Package Equivalence Code DIMM200,24
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 8192
Standby Current-Max 0.08 A
Supply Current-Max 5.52 mA
Supply Voltage-Nom (Vsup) 2.6 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form NO LEAD
Terminal Pitch 0.6 mm
Terminal Position DUAL

Alternate Parts for MT16VDDF12864HY-40BJ1

This table gives cross-reference parts and alternative options found for MT16VDDF12864HY-40BJ1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT16VDDF12864HY-40BJ1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
M470L2923DV0-CB3 DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 Samsung Semiconductor MT16VDDF12864HY-40BJ1 vs M470L2923DV0-CB3
NT1GD64S8HB0FN-6K DDR DRAM Module, 128MX64, 0.75ns, CMOS, GREEN, SODIMM-200 Nanya Technology Corporation MT16VDDF12864HY-40BJ1 vs NT1GD64S8HB0FN-6K
M470L2923BN0-LB3 DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 Samsung Semiconductor MT16VDDF12864HY-40BJ1 vs M470L2923BN0-LB3
NT1GD64S8HB0FM-6K DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 Nanya Technology Corporation MT16VDDF12864HY-40BJ1 vs NT1GD64S8HB0FM-6K
HYMD512M646BLF8-D43 DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 SK Hynix Inc MT16VDDF12864HY-40BJ1 vs HYMD512M646BLF8-D43
EBD11UD8ADDA-6B-E DDR DRAM Module, 128MX64, 0.7ns, CMOS, LEAD FREE, SODIMM-200 Elpida Memory Inc MT16VDDF12864HY-40BJ1 vs EBD11UD8ADDA-6B-E
M470L2923DV0-CCC DDR DRAM Module, 128MX64, 0.65ns, CMOS, ROHS COMPLIANT, SODIMM-200 Samsung Semiconductor MT16VDDF12864HY-40BJ1 vs M470L2923DV0-CCC
HYMD512M646BF8-D43 DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 SK Hynix Inc MT16VDDF12864HY-40BJ1 vs HYMD512M646BF8-D43
M470L2923BN0-CCC DDR DRAM Module, 128MX64, 0.65ns, CMOS, SODIMM-200 Samsung Semiconductor MT16VDDF12864HY-40BJ1 vs M470L2923BN0-CCC
HYMD512M646BLFP8-D43 DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 SK Hynix Inc MT16VDDF12864HY-40BJ1 vs HYMD512M646BLFP8-D43

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