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MRF6V2300NB vs MRF6V2300NR1 feature comparison

MRF6V2300NB NXP Semiconductors

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MRF6V2300NR1 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description FLANGE MOUNT, R-PDFM-F4 FLANGE MOUNT, R-PDFM-F4
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Case Connection SOURCE SOURCE
Configuration SINGLE SINGLE
DS Breakdown Voltage-Min 110 V 110 V
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code TO-270AA TO-270
JESD-30 Code R-PDFM-F4 R-PDFM-F4
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 225 °C 225 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 40
Transistor Element Material SILICON SILICON
Base Number Matches 3 1
HTS Code 8541.29.00.75
JESD-609 Code e3
Moisture Sensitivity Level 3
Terminal Finish TIN
Transistor Application AMPLIFIER
Transistors » RF Power Field-Effect Transistors
Transistors » RF Power Field-Effect Transistors

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