MQ1N6279AE3TR vs P4SMA24AHE3/5A feature comparison

MQ1N6279AE3TR Microsemi Corporation

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P4SMA24AHE3/5A Vishay Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP VISHAY SEMICONDUCTORS
Package Description O-PALF-W2 R-PDSO-C2
Pin Count 2 2
Manufacturer Package Code CASE 1
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 23.1 V 25.2 V
Breakdown Voltage-Min 20.9 V 22.8 V
Breakdown Voltage-Nom 22 V 24 V
Case Connection ISOLATED
Clamping Voltage-Max 30.6 V 33.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W 3.3 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 18.8 V 20.5 V
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code DO-214AC
Additional Feature EXCELLENT CLAMPING CAPABILITY
JEDEC-95 Code DO-214AC
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

Compare MQ1N6279AE3TR with alternatives

Compare P4SMA24AHE3/5A with alternatives