MQ1N6279AE3TR vs 1N6279A-E3/51 feature comparison

MQ1N6279AE3TR Microsemi Corporation

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1N6279A-E3/51 Vishay Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP VISHAY SEMICONDUCTORS
Package Description O-PALF-W2 O-PALF-W2
Pin Count 2 2
Manufacturer Package Code CASE 1 CASE 1.5KE
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 23.1 V 23.1 V
Breakdown Voltage-Min 20.9 V 20.9 V
Breakdown Voltage-Nom 22 V 22 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 30.6 V 30.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W 6.5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 18.8 V 18.8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Pbfree Code Yes

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Compare 1N6279A-E3/51 with alternatives