MMDF1N05EG
vs
MMDF1N05ER2
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MOTOROLA INC
ON SEMICONDUCTOR
Package Description
SMALL OUTLINE, R-PDSO-G8
SO-8
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE ENERGY RATED; LOGIC LEVEL COMPATIBLE
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
300 mJ
300 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
50 V
50 V
Drain Current-Max (ID)
2 A
2 A
Drain-source On Resistance-Max
0.5 Ω
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
10 A
10 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Pbfree Code
Part Package Code
SOIC-8 Narrow Body
Pin Count
8
Manufacturer Package Code
751-07
HTS Code
8541.29.00.95
Samacsys Manufacturer
onsemi
JESD-609 Code
e0
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
235
Power Dissipation-Max (Abs)
2 W
Terminal Finish
Tin/Lead (Sn/Pb)
Time@Peak Reflow Temperature-Max (s)
30
Compare MMDF1N05EG with alternatives
Compare MMDF1N05ER2 with alternatives