MMDF1N05ER2
vs
NDS9945X
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MOTOROLA SEMICONDUCTOR PRODUCTS
NATIONAL SEMICONDUCTOR CORP
Package Description
,
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
unknown
unknown
Drain Current-Max (Abs) (ID)
2 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
2 W
Surface Mount
YES
YES
Base Number Matches
4
1
ECCN Code
EAR99
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
3.5 A
Drain-source On Resistance-Max
0.1 Ω
JESD-30 Code
R-PDSO-G8
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Pulsed Drain Current-Max (IDM)
10 A
Qualification Status
Not Qualified
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
90 ns
Turn-on Time-Max (ton)
55 ns
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