MMBT6428LT1G
vs
BCX70JTR13
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
No
Part Life Cycle Code
Active
Active
Ihs Manufacturer
ONSEMI
CENTRAL SEMICONDUCTOR CORP
Part Package Code
SOT-23 (TO-236) 3 LEAD
Pin Count
3
Manufacturer Package Code
318
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
2 Days
Samacsys Manufacturer
onsemi
Samacsys Modified On
2024-09-19 14:45:22
Total Weight
8.02
Category CO2 Kg
8.8
8.8
CO2
70.57600000000001
Compliance Temperature Grade
Military: -55C to +150C
EU RoHS Version
RoHS 2 (2015/863/EU)
Candidate List Date
2024-01-23
CAS Accounted for Wt
100
CA Prop 65 Presence
YES
CA Prop 65 CAS Numbers
1333-86-4, 7440-02-0
EFUP
e
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V6.31
Collector Current-Max (IC)
0.2 A
0.1 A
Collector-Emitter Voltage-Max
50 V
45 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
250
250
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
0.225 W
0.35 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
100 MHz
250 MHz
Base Number Matches
1
1
Rohs Code
No
Additional Feature
LOW NOISE
Collector-Base Capacitance-Max
2.5 pF
VCEsat-Max
0.55 V
Compare MMBT6428LT1G with alternatives
Compare BCX70JTR13 with alternatives