MMBD6050-H
vs
LMBD6050LT1G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
FORMOSA MICROSEMI CO LTD
LESHAN RADIO CO LTD
Package Description
R-PDSO-G3
R-PDSO-G3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Application
GENERAL PURPOSE
GENERAL PURPOSE
Breakdown Voltage-Min
70 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
0.7 V
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Non-rep Pk Forward Current-Max
0.5 A
0.5 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
0.2 A
0.2 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Power Dissipation-Max
0.225 W
0.225 W
Rep Pk Reverse Voltage-Max
70 V
70 V
Reverse Current-Max
0.1 µA
Reverse Recovery Time-Max
0.004 µs
0.004 µs
Reverse Test Voltage
50 V
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
1
2
Rohs Code
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare MMBD6050-H with alternatives
Compare LMBD6050LT1G with alternatives